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Temperature, stress, disorder, and crystallization effects in laser diodes: measurements and impacts
Near-field optical-beam-induced current spectroscopy as a tool for analyzing aging processes in diode lasers
Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets
Temperature sensitivity of strained multiple quantum well long-wavelength semiconductor lasers: root cause analysis and the effects of varying device structure
InAsSb-based mid-infrared lasers (3.8 to 3.9 um) and light-emitting diodes with AlAsSb claddings and semimetal electron injection grown by metal-organic chemical vapor deposition
Suppression of Auger recombination in the diode lasers based on type II InAsSb/InAsSbP and InAs/GaInAsSb heterostructures