2 May 1997 3 to 5-um lasers employing GaInSb/InAs superlattice active layers
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Abstract
We demonstrate midwave infrared diode lasers than span the 3 - 4 micrometers range. Laser active regions are multiple quantum well structures with GaInSb/InAs, type-II, broken gap superlattices for the wells and GaInAsSb for the barriers. The superlattice constituents and dimensions were tailored to reduce losses from Auger recombination. AlSb/InAs superlattices are used for both n-type and p-type laser cladding regions. A device with emission at 3.2 micrometers lased up to 255 K. We have achieved 75 mW per facet at 3.0 micrometers at an operating temperature of 140 K with an 85 microsecond(s) ec input current pulse. Device output appears to be limited by resistive heating. A four-layer, strain-balanced superlattice design offers greater laser efficiency.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alan R. Kost, Alan R. Kost, L. West, L. West, Richard H. Miles, Richard H. Miles, Tom C. Hasenberg, Tom C. Hasenberg, } "3 to 5-um lasers employing GaInSb/InAs superlattice active layers", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273801; https://doi.org/10.1117/12.273801
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