2 May 1997 Continuous-wave high-power diode lasers for the 3-um wavelengths
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In this paper we investigate power and temperature characteristics of continuous-wave InAsSb lasers operating in the 3 - 4 micrometers wavelength range. Basic laser parameters are shown versus direct current and case temperature with special attention to the distribution of optical power between individual laser modes. CW operation temperature as high as 122 K for the InAsSb/InAsSbP double heterostructure lasers grown by liquid phase epitaxy is reported. The influence of temperature on the characteristics is taking into account several non-radiative processes such as Auger processes and carrier leakage due to diffusion effects. Losses and power saturation that observed at a higher temperature (100 K) led to stable single frequency emission at higher temperatures. CW optical power up to 10 mW has been obtained. It is shown that the mode power is limited to about 2 mW both for multi- and for single mode injection lasers in this spectral range.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrei A. Popov, Andrei A. Popov, Victor V. Sherstnev, Victor V. Sherstnev, Yury P. Yakovlev, Yury P. Yakovlev, Robert Josef Muecke, Robert Josef Muecke, Peter W. Werle, Peter W. Werle, } "Continuous-wave high-power diode lasers for the 3-um wavelengths", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273805; https://doi.org/10.1117/12.273805

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