External cavity mid-infrared semiconductor lasers

Han Q. Le; George W. Turner; Juan R. Ochoa; M. J. Manfra; Christopher C. Cook; YongHang Zhang

doi:10.1117/12.273799

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2 May 1997 External cavity mid-infrared semiconductor lasers

Han Q. Le, George W. Turner, Juan R. Ochoa, M. J. Manfra, Christopher C. Cook, YongHang Zhang

Author Affiliations +

Proceedings Volume 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared; (1997) https://doi.org/10.1117/12.273799
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

GaSb-based and InAs-based semiconductor gain media with band-edge wavelengths between 3.3 to 4 micrometers were used in grating-tuned external cavity configuration. Output wavelength was tuned up to approximately 9.5% of the center wavelength; and power from few tens of mW to 0.2-W peak, 20- mW average was achieved at 80 K operation. The tuning range is approximately 2 - 3 times wider than those of near-IR semiconductor lasers, as expected for mid-IR semiconductors which have smaller electron masses. The external cavity laser had a multimode linewidth of 1 - 2 nm, which was approximately 10 to 20 times narrower than that of a free running laser. Analysis of the gain/loss spectral properties indicates that the tuning range is still severely limited by facet anti-reflection coating and non-optimal wafer structure. Model calculation indicates a tuning range a few times larger is possible with more optimal wafer design.

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Han Q. Le, George W. Turner, Juan R. Ochoa, M. J. Manfra, Christopher C. Cook, and YongHang Zhang "External cavity mid-infrared semiconductor lasers", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); https://doi.org/10.1117/12.273799

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