2 May 1997 GaInAsSb/AlGaAsSb diode lasers grown by organometallic vapor phase epitaxy
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GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapor phase epitaxy are reported. The laser structure consists of n- and p-doped Al0.59Ga0.41As0.05Sb0.95 cladding layer, Al0.28Ga0.72As0.02Sb0.98 confining layers, and four 15-nm- thick Ga0.87In0.13As0.12Sb0.88 quantum wells with 20-nm-thick Al0.28Ga0.72As0.02Sb0.98 barrier layers. These lasers, emitting at 2.1 micrometers , have exhibited pulsed threshold current densities as low as 1.2 kA/cm2.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christine A. Wang, Christine A. Wang, Hong K. Choi, Hong K. Choi, } "GaInAsSb/AlGaAsSb diode lasers grown by organometallic vapor phase epitaxy", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273802; https://doi.org/10.1117/12.273802


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