2 May 1997 High-performance 1.3-um GaInAsP/InP tensile-strained quantum well lasers
Author Affiliations +
Tensile-strained GaInAsP/InP quantum well (QW) lasers emitting at 1.3 micrometers are investigated. By introducing tensile-strained QW as an active region, low threshold current operation with good temperature characteristic are obtained. The lowest threshold current of 1.0 mA was achieved in a triple QW laser. Enhanced differential gain shows the feasibility of high speed operation. We also verified long-term reliability of approximately 105 hours at 85 degree(s)C, 10 mW condition.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Noriyuki Yokouchi, Noriyuki Yokouchi, Akihiko Kasukawa, Akihiko Kasukawa, } "High-performance 1.3-um GaInAsP/InP tensile-strained quantum well lasers", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273808; https://doi.org/10.1117/12.273808


InGaN/GaN quantum dot blue and green lasers
Proceedings of SPIE (March 03 2013)
1.3 um and 1.55 um InGaAsP InP quantum well light...
Proceedings of SPIE (September 29 1996)
Electrically tunable cascaded mid-IR type II light source
Proceedings of SPIE (March 31 2005)
Quantum dot intersublevel light emitters
Proceedings of SPIE (May 10 2004)
Reliability of ridge waveguide GaInAsP/InP laser
Proceedings of SPIE (January 31 1992)

Back to Top