2 May 1997 High-power 1.3um InGaAsP/InP lasers and amplifiers with tapered gain regions
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Tapered structures fabricated in InGaAsP/InP 1.3-micrometers quantum-well material have been evaluated as lasers and as high-gain high-saturation-power amplifiers. The devices, which had a 1-mm-long ridge-waveguide gain section followed by a 2-mm-long tapered gain region, demonstrated > 1 W output power as lasers, with > 85% of the power in a central diffraction-limited lobe. The amplifiers had an unsaturated gain of 26 dB at 2.0 A and about 30 dB at 2.8 A. Saturated output power at 2.8 A was > 750 mW. At 2.0-A drive current and approximately equals 10-mW input power, the relative intensity noise of the amplified signal was <EQ -160 dB/Hz at frequencies >= 2 GHz.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James N. Walpole, Gary E. Betts, Joseph P. Donnelly, Steven H. Groves, "High-power 1.3um InGaAsP/InP lasers and amplifiers with tapered gain regions", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273818; https://doi.org/10.1117/12.273818

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