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2 May 1997 High-power InGaAs(P)/InGa(Al)P/GaAs semiconductor diode lasers
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Abstract
Al-free active-region, 100 micrometers -stripe lasers operating at a wavelength of 0.98 micrometers (0.81 micrometers ), provide high CW powers: 8W (5W) and `wallplug' efficiencies: 66% (45%). At 0.81 micrometers , the devices are potentially twice as reliable as Al-containing active-layer devices.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luke J. Mawst and Dan Botez "High-power InGaAs(P)/InGa(Al)P/GaAs semiconductor diode lasers", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); https://doi.org/10.1117/12.273784
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