2 May 1997 High-temperature mid-IR type-II quantum well lasers
Author Affiliations +
Proceedings Volume 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared; (1997); doi: 10.1117/12.273800
Event: Photonics West '97, 1997, San Jose, CA, United States
A series of optically-pumped type-II quantum well lasers with emission wavelengths between 3.2 micrometers and 4.5 micrometers have displayed stimulated emission up to ambient operating temperatures. The 4-constituent design combines the advantages of excellent carrier confinement, potential for significant Auger suppression, and a 2D density-of-states for both electrons and holes. For a device emitting at 4.5 micrometers , the characteristic temperature was 41 K and a peak output power exceeding 2 W/facet was observed at 200 K. Auger coefficients extracted from the threshold pump intensity confirm that Auger losses at 300 K were suppressed by at least a factor of two. We also discuss modeling results for a type-II interband cascade laser structure which is predicted to yield much higher output powers and operating temperatures than conventional bipolar diode lasers, as well as lower threshold currents than the intersubband quantum cascade laser.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerry R. Meyer, Christopher L. Felix, Jay I. Malin, Igor Vurgaftman, Craig A. Hoffman, C.H. Thompson Lin, Paul Chang, Stefan J. Murry, Rui Q. Yang, Shin Shem Pei, L. R. Ram-Mohan, "High-temperature mid-IR type-II quantum well lasers", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273800; https://doi.org/10.1117/12.273800


Quantum wells

Quantum cascade lasers

Semiconductor lasers

Active optics


Indium arsenide


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