2 May 1997 InAsSb-based mid-infrared lasers (3.8 to 3.9 um) and light-emitting diodes with AlAsSb claddings and semimetal electron injection grown by metal-organic chemical vapor deposition
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Abstract
Mid-infrared (3 - 5 micrometers ) lasers and LED's are being developed for use in chemical sensor systems. As-rich, InAsSb heterostructures display unique electronic properties that are beneficial to the performance of these midwave infrared emitters. The metal-organic chemical vapor depositions growth of AlAs1-xSbx cladding layers and InAsSb/InAsP superlattice active regions are described. A regrowth technique has been used to fabricate gain-guided, injection lasers using undoped (p-type) AlAs0.16Sb0.84 for optical confinement. In device studies, we demonstrate lasers and LEDs utilizing the semi-metal properties of a p-GaAsSb/n-InAs heterojunction as a source for injection of electrons into the active region of emitters. This avoids the difficulties associated with n- type doping of AlAsSb cladding layers required for conventional p-n junction lasers and also provides a means for construction of active regions with multiple gain stages. Gain guided injected lasers employing a strained InAsSb/InAs multi-quantum well active region operated up to 210 K in pulsed mode, with an emission wavelength of 3.8 - 3.9 micrometers . A characteristic temperature of 40 K was observed to 140 K and 29 K from 140 K to 210 K. An optically pumped laser with an InAsSb/InAsP superlattice active region is also described. The maximum operating temperature of this 3.7 micrometers laser was 240 K.
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Andrew A. Allerman, Andrew A. Allerman, Robert M. Biefeld, Robert M. Biefeld, Steven R. Kurtz, Steven R. Kurtz, } "InAsSb-based mid-infrared lasers (3.8 to 3.9 um) and light-emitting diodes with AlAsSb claddings and semimetal electron injection grown by metal-organic chemical vapor deposition", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273803; https://doi.org/10.1117/12.273803
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