2 May 1997 Mid-IR room temperature quantum cascade lasers
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Abstract
The high power operation of mid-infrared quantum cascade lasers at temperatures up to T equals 320 K is reported. Gain at high temperature is optimized by a design combining low doping, a funnel injector and a three well vertical transition active region. A molecular beam epitaxy grown InP top cladding layer is also used to optimize heat dissipation. Peak pulsed optical power of 200 mW and average power of 6 mW are obtained at 300 K and at a wavelength (lambda) equals 5.2 micrometers . At (lambda) equals 8.5 micrometers , the pulsed optical power is 10 mW.
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Jerome Faist, Carlo Sirtori, Federico Capasso, Deborah L. Sivco, James N. Baillargeon, Albert L. Hutchinson, Sung-Nee G. Chu, Alfred Y. Cho, "Mid-IR room temperature quantum cascade lasers", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273795; https://doi.org/10.1117/12.273795
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