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2 May 1997 New approach to blue-shifting asymmetric quantum wells
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Abstract
Asymmetric quantum wells which exhibit a blue-shift in their transition energy with increasing optical pump intensity are of interest for use in a variety of optoelectronic devices. The blue-shift is usually achieved by the piezoelectric effect in quantum wells which are grown to be mismatched with respect to a substrate cut on a polar orientation, usually (111) GaAs. The internal piezoelectric field produces a triangular-shaped well which flattens-out as carriers are injected and screen the field. We have overcome a number of difficulties in this approach by generating the internal field in structures grown on (100) substrates by introducing delta-doping layers of opposite type at the well-barrier interface at each side of the well. In this paper we present details of the electro-optical properties of both kinds of structure and we show that the delta-doped structures exhibit similar blue-shifts to their (111) counterparts. We show that both structures produce laser action under injection from a p-n junction.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Craig Cooper, Peter Blood, Catherine H. Molloy, Xiaoyuan Chen, David I. Westwood, Peter M. Smowton, and David Somerford "New approach to blue-shifting asymmetric quantum wells", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); https://doi.org/10.1117/12.273787
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