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2 May 1997 Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets
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Abstract
The optical spectroscopic techniques of photoluminescence and photoluminescence excitation are used to determine the electronic band structure of GaAs-lattice matched bulk (AlxGa1-x)0.52In0.48P and Ga0.52In0.48P-(AlxGa1-x)0.52In0.48P quantum wells. The compositional dependence of both the direct and indirect band gaps is determined for bulk (AlxGa1-x)0.52In0.48P epitaxial layers. These measurements allow the composition for which the lowest energy band gap becomes indirect to be deduced (xc equals 0.50 +/- 0.02). Photoluminescence and photoluminescence excitation studies of Ga0.52In0.48P-(AlxGa1-x)0.52In0.48P quantum wells indicate high structural and optical quality and demonstrate that thin (< 40 angstroms) Ga0.52In0.48P wells with Al0.52In0.48P-(AlxGa1-x)0.52In0.48P quantum wells to be determined in an accurate and reliable manner. The conduction band offset, (Delta) Ec, expressed as a fraction of the total direct band gap discontinuity, (Delta) EG, is found to be approximately independent of barrier Al composition ((Delta) Ec approximately equals 0.67 (Delta) EG).
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David J. Mowbray, Olgierd P. Kowalski, John W. Cockburn, Maurice S. Skolnick, Mark Hopkinson, and John P. R. David "Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); https://doi.org/10.1117/12.273781
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