2 May 1997 Performance of ridge-guide AlGaInAs lasers
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Abstract
AlGaInAs semiconductor lasers operating at a wavelength of 1.3 micrometers show superior performance compared to InGaAsP lasers. Ridge guide lasers are fabricated from both material systems by the same process. The characteristic temperature To for the AlGaInAs lasers (approximately 100 degree(s)K) is about twice that of the InGaAsP lasers (approximately 50 degree(s)K) resulting in substantially lower thresholds (approximately 34 mA compared to approximately 56 mA) at 85 degree(s)C. The 3-dB modulation frequency of AlGaInAs lasers is about 25% higher than that of the InGaAsP lasers.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jieh-Ping Sih, Jieh-Ping Sih, T. M. Chou, T. M. Chou, Jay B. Kirk, Jay B. Kirk, Jerome K. Butler, Jerome K. Butler, Gary A. Evans, Gary A. Evans, A. R. Mantie, A. R. Mantie, Jack Koscinski, Jack Koscinski, Richard K. DeFreez, Richard K. DeFreez, } "Performance of ridge-guide AlGaInAs lasers", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273791; https://doi.org/10.1117/12.273791
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