2 May 1997 Quantum cascade light-emitting diodes based on type-II quantum wells
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Abstract
We have demonstrated room-temperature CW operation of type- II quantum cascade (QC) light emitting diodes at 4.2 micrometers using InAs/InGaSb/InAlSb type-II quantum wells. The type-II QC configuration utilizes sequential multiple photon emissions in a staircase of coupled type-II quantum wells. The device was grown by molecular beam epitaxy on a p-type GaSb substrate and was composed of 20 periods of active regions separated by digitally graded quantum well injection regions. The maximum average output power is about 250 (mu) W at 80 K, and 140 (mu) W at 300 K at a repetition rate of 1 kHz with a duty cycle of 50%.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C.H. Thompson Lin, C.H. Thompson Lin, Rui Q. Yang, Rui Q. Yang, Dongxu Zhang, Dongxu Zhang, Stefan J. Murry, Stefan J. Murry, Shin Shem Pei, Shin Shem Pei, Andrew A. Allerman, Andrew A. Allerman, Steven R. Kurtz, Steven R. Kurtz, } "Quantum cascade light-emitting diodes based on type-II quantum wells", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273797; https://doi.org/10.1117/12.273797
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