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2 May 1997 Suppression of Auger recombination in the diode lasers based on type II InAsSb/InAsSbP and InAs/GaInAsSb heterostructures
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Comparative study of threshold current temperature dependence, differential quantum efficiency and light polarization was performed for type I and type II InAsSb/InAsSbP heterostructures as well as for tunneling- injection GaInAsSb/InGaAsSb laser based on this type II broken-gap heterojunction. Experimental evidence of non- radiative Auger-recombination suppression in type II InAsSb/InAsSbP heterolasers with high band-offset ratio (Delta) Ev/(Delta) Ec equals 3.4 was obtained. Reduction of temperature dependence of the threshold current was demonstrated for both kinds of type II lasers. Maximum operation temperature and characteristic temperature T equals 203 K with T0 equals 40 K and T equals 195 K with T0 equals 47 K were achieved for type II InAsSb/InAsSbP and tunneling- injection p-GaInAsSb/n-InGaAsSb lasers, respectively.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yury P. Yakovlev, Tamara N. Danilova, Albert N. Imenkov, Maya P. Mikhailova, Konstantin D. Moiseev, Oleg G. Ershov, Victor V. Sherstnev, and Georgy G. Zegrya "Suppression of Auger recombination in the diode lasers based on type II InAsSb/InAsSbP and InAs/GaInAsSb heterostructures", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997);


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