Temperature insensitivity of the Al-free InGaAsP lasers for <lambda> =808 and 980 nm

Manijeh Razeghi; Hyuk Jong Yi; Jacqueline E. Diaz; Seongsin Kim; Matthew Erdtmann

doi:10.1117/12.273792

2 May 1997 Temperature insensitivity of the Al-free InGaAsP lasers for λ =808 and 980 nm

Manijeh Razeghi, Hyuk Jong Yi, Jacqueline E. Diaz, Seongsin Kim, Matthew Erdtmann

Proceedings Volume 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared; (1997) https://doi.org/10.1117/12.273792
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

In this work, we present our recent achievements for the reliability of the Al-free lasers at high temperatures and high powers. Laser operations up to 30,000 hours were achieved without any degradation in the lasers characteristics from 7 randomly selected InGaAsP/GaAs diodes for (lambda) equals 808 nm. The test were performed for lasers without mirror-coating for optical power of 0.5 to 1 W CW at 50 approximately 60 degree(s)C. To the best of our knowledge, this is the first direct demonstration of the extremely high reliability of Al-free diodes operations at high powers and temperatures for periods of time much longer than practical need (approximately 3 years). The characteristics during the tests are discussed in detail.

Citation Download Citation

Manijeh Razeghi, Hyuk Jong Yi, Jacqueline E. Diaz, Seongsin Kim, and Matthew Erdtmann "Temperature insensitivity of the Al-free InGaAsP lasers for λ =808 and 980 nm", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); https://doi.org/10.1117/12.273792

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