2 May 1997 Temperature insensitivity of the Al-free InGaAsP lasers for λ =808 and 980 nm
Author Affiliations +
Abstract
In this work, we present our recent achievements for the reliability of the Al-free lasers at high temperatures and high powers. Laser operations up to 30,000 hours were achieved without any degradation in the lasers characteristics from 7 randomly selected InGaAsP/GaAs diodes for (lambda) equals 808 nm. The test were performed for lasers without mirror-coating for optical power of 0.5 to 1 W CW at 50 approximately 60 degree(s)C. To the best of our knowledge, this is the first direct demonstration of the extremely high reliability of Al-free diodes operations at high powers and temperatures for periods of time much longer than practical need (approximately 3 years). The characteristics during the tests are discussed in detail.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manijeh Razeghi, Manijeh Razeghi, Hyuk Jong Yi, Hyuk Jong Yi, Jacqueline E. Diaz, Jacqueline E. Diaz, Seongsin Kim, Seongsin Kim, Matthew Erdtmann, Matthew Erdtmann, } "Temperature insensitivity of the Al-free InGaAsP lasers for λ =808 and 980 nm", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273792; https://doi.org/10.1117/12.273792
PROCEEDINGS
11 PAGES


SHARE
Back to Top