2 May 1997 Temperature insensitivity of the Al-free InGaAsP lasers for λ =808 and 980 nm
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In this work, we present our recent achievements for the reliability of the Al-free lasers at high temperatures and high powers. Laser operations up to 30,000 hours were achieved without any degradation in the lasers characteristics from 7 randomly selected InGaAsP/GaAs diodes for (lambda) equals 808 nm. The test were performed for lasers without mirror-coating for optical power of 0.5 to 1 W CW at 50 approximately 60 degree(s)C. To the best of our knowledge, this is the first direct demonstration of the extremely high reliability of Al-free diodes operations at high powers and temperatures for periods of time much longer than practical need (approximately 3 years). The characteristics during the tests are discussed in detail.
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Manijeh Razeghi, Manijeh Razeghi, Hyuk Jong Yi, Hyuk Jong Yi, Jacqueline E. Diaz, Jacqueline E. Diaz, Seongsin Kim, Seongsin Kim, Matthew Erdtmann, Matthew Erdtmann, } "Temperature insensitivity of the Al-free InGaAsP lasers for λ =808 and 980 nm", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273792; https://doi.org/10.1117/12.273792

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