2 May 1997 Temperature, stress, disorder, and crystallization effects in laser diodes: measurements and impacts
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Abstract
This paper reviews extensive Raman scattering, reflectance modulation and luminescence microprobe measurements made on GaInP/AlGaInP, GaAs/AlGaAs and InGaAs/AlGaAs ridge quantum well lasers to investigate (1) laser operating temperatures, (2) built-in mechanical stress, (3) atomic disorder in mirror facets, (4) Si recrystallization effects in mirror coatings, and (5) correlations of these parameters with laser performance and reliability data.
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Peter W. Epperlein, Peter W. Epperlein, } "Temperature, stress, disorder, and crystallization effects in laser diodes: measurements and impacts", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273793; https://doi.org/10.1117/12.273793
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