Thermally induced delayed turn-on in thin p-clad lasers

Carl F. Miester; Chih Hung Wu; Peter S. Zory; Mark A. Emanuel

doi:10.1117/12.273814

2 May 1997 Thermally induced delayed turn-on in thin p-clad lasers

Carl F. Miester, Chih Hung Wu, Peter S. Zory, Mark A. Emanuel

Proceedings Volume 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared; (1997) https://doi.org/10.1117/12.273814
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Lasing delays on the order of microseconds have been observed in wide-stripe, thin p-clad, InGaAs single quantum well lasers with `thick' p⁺ cap layers. A lasing delay mechanism involving transient, thermally induced refractive index changes due to ohmic loss in the contact resistance is proposed and investigated using computer modeling.

Citation Download Citation

Carl F. Miester, Chih Hung Wu, Peter S. Zory, and Mark A. Emanuel "Thermally induced delayed turn-on in thin p-clad lasers", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); https://doi.org/10.1117/12.273814

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