2 May 1997 Thermally induced delayed turn-on in thin p-clad lasers
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Abstract
Lasing delays on the order of microseconds have been observed in wide-stripe, thin p-clad, InGaAs single quantum well lasers with `thick' p+ cap layers. A lasing delay mechanism involving transient, thermally induced refractive index changes due to ohmic loss in the contact resistance is proposed and investigated using computer modeling.
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Carl F. Miester, Carl F. Miester, Chih Hung Wu, Chih Hung Wu, Peter S. Zory, Peter S. Zory, Mark A. Emanuel, Mark A. Emanuel, } "Thermally induced delayed turn-on in thin p-clad lasers", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273814; https://doi.org/10.1117/12.273814
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