2 May 1997 Wide-bandgap semiconductor laser: challenges for the future
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Abstract
Growth of II-VI and III-V nitrides by MBE and MOCVD is being studied. Using GaAs as a buffer and ZnMgSSe quaternary alloy as a cladding layer together with a ZnSe/ZnTe superlattice for ohmic contact, room temperature CW operation of II-VI lasers has been achieved. Focus topics include the (1) optical properties of ZnSe-based epilayers, (2) the effect of GaAs buffer surface construction and initial growth condition of ZnSe on the defect density and (3) etch-pit configuration of different type of defects in ZnSe-based epilayers. Multilayer p-GaN/MQW GaN-In0.1GaN/n-GaN were grown on sapphire substrate using MOVPE and plasma-assisted ionized source beam epitaxy. We investigated the (1) growth and properties of III-V nitride films by LP-MOVPE and PAMBE (Plasma Assisted Molecular Beam Epitaxy), (2) etch-pit and wet etching of GaN/(0001)Al2O3, (3) ohmic contacts of GaN and (4) GaN etching by CARIBE.
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Taeil Kim, Moon-Hyun Yoo, Eunsoon Oh, Min-Hyon Jeon, Youngjun Park, Tae-Ho Kim, Jeong-Woo Lee, "Wide-bandgap semiconductor laser: challenges for the future", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273776; https://doi.org/10.1117/12.273776
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