4 April 1997 High-speed surface-light-emitting diodes for data communication applications
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Abstract
Improvement of high-speed surface light emitting diodes has been demonstrated by a novel selective regrowth of circular etched mesas with a semi-insulating iron-doped indium phosphide layer. Inclusion of an interfacial layer of indium gallium arsenide phosphide between the circular dielectric mask and the underlying material produces a favorable smooth mesa profile by controlling the level of undercut during mesa etching. This combination of profile and undercut was found to be critical for successful selective regrowth and planarization. The semi-insulating indium-phosphide layer reduces the parasitic capacitance and improves the heat dissipation. These salient features make these devices suitable for high speed digital and analog communication applications requiring high linearity.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ching Long Jiang, William H. Reysen, "High-speed surface-light-emitting diodes for data communication applications", Proc. SPIE 3002, Light-Emitting Diodes: Research, Manufacturing, and Applications, (4 April 1997); doi: 10.1117/12.271039; https://doi.org/10.1117/12.271039
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