4 April 1997 Influence of impurities on luminescence of Er-doped silicon structures
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The investigation of photo- and electroluminescence in erbium-doped silicon additionally co-implanted with oxygen, phosphorus and boron show an enhancement of the 1.54 micrometers line luminescence intensity in Si:Er:O and Si:Er:O:P and an intensity quenching in Si:Er:O:B as compared with Si:Er. A threshold in dependence of defect-related line electroluminescence signal on drive current is observed too. A model describing the observed variations of luminescence spectra in dependence on implantation and annealing conditions is presented. Optimization of technological regimes resulted in formation of light emitting erbium-doped silicon structures operating at room temperature.
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Nikolai A. Sobolev, Oleg V. Aleksandrov, Mikhail S. Bresler, Oleg B. Gusev, Pavel E. Khakuashev, Yurii A. Kudryavtsev, Miroslav I. Makoviichuk, Yurii A. Nikolaev, Petr E. Pak, Evgenii O. Parshin, Elena I. Shek, Mikhail A. Trishenkov, Aleksey O. Zakhar'in, "Influence of impurities on luminescence of Er-doped silicon structures", Proc. SPIE 3002, Light-Emitting Diodes: Research, Manufacturing, and Applications, (4 April 1997); doi: 10.1117/12.271042; https://doi.org/10.1117/12.271042

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