Present performance of InGaN-based blue/green/yellow LEDs

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4 April 1997 Present performance of InGaN-based blue/green/yellow LEDs

Shuji Nakamura

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Proceedings Volume 3002, Light-Emitting Diodes: Research, Manufacturing, and Applications; (1997) https://doi.org/10.1117/12.271048
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

InGaN single-quantum-well (SQW) structure blue/green light- emitting diodes (LEDs) were fabricated. At 20 mA, the output power and the external quantum efficiency of the blue SQW LEDs were 5 mW and 9.1 percent, respectively. Those of the green SQW LEDs will a 10 degree cone viewing angle was 10 cd at 20 mA. A white LED made by combining a blue InGaN SQW LED and yttrium aluminium garnet phosphor, which is less expensive than a white LED composed of three primary color LEDs, was developed.

© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

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Shuji Nakamura "Present performance of InGaN-based blue/green/yellow LEDs", Proc. SPIE 3002, Light-Emitting Diodes: Research, Manufacturing, and Applications, (4 April 1997); https://doi.org/10.1117/12.271048

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Cited by 105 scholarly publications and 3 patents.

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KEYWORDS

Light emitting diodes

Indium gallium nitride

Blue light emitting diodes

Lamps

Gallium nitride

YAG lasers

External quantum efficiency

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