4 April 1997 Pulsed electrochemical etching of InGaN/GaN LED material
Author Affiliations +
Proceedings Volume 3002, Light-Emitting Diodes: Research, Manufacturing, and Applications; (1997); doi: 10.1117/12.271037
Event: Photonics West '97, 1997, San Jose, CA, United States
Abstract
A pulsed electrochemical technique for etching MOCVD-grown InGaN/GaN light-emitting diode material at room temperature is reported. The p-GaN and InGaN layers can be etched away in minutes providing access to the n-GaN layer below. Movement of the etch front through the p-n junction region can be observed by monitoring changes in the current pulse shape with time on an oscilloscope.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeong Seok O, Peter S. Zory, David P. Bour, "Pulsed electrochemical etching of InGaN/GaN LED material", Proc. SPIE 3002, Light-Emitting Diodes: Research, Manufacturing, and Applications, (4 April 1997); doi: 10.1117/12.271037; https://doi.org/10.1117/12.271037
PROCEEDINGS
4 PAGES


SHARE
KEYWORDS
Etching

Light emitting diodes

Electrochemical etching

Gallium nitride

Oscilloscopes

Quantum wells

Ions

RELATED CONTENT

Process control of MOCVD growth for LEDs by in situ...
Proceedings of SPIE (March 08 2016)
GaN based LEDs with air voids prepared by laser scribing...
Proceedings of SPIE (February 06 2012)
Fabrication of high-brightness blue InGaN/GaN MQW LEDs
Proceedings of SPIE (September 17 2002)
Advances in nano-enabled GaN photonic devices
Proceedings of SPIE (January 24 2011)

Back to Top