4 April 1997 Pulsed electrochemical etching of InGaN/GaN LED material
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Abstract
A pulsed electrochemical technique for etching MOCVD-grown InGaN/GaN light-emitting diode material at room temperature is reported. The p-GaN and InGaN layers can be etched away in minutes providing access to the n-GaN layer below. Movement of the etch front through the p-n junction region can be observed by monitoring changes in the current pulse shape with time on an oscilloscope.
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Jeong Seok O, Peter S. Zory, David P. Bour, "Pulsed electrochemical etching of InGaN/GaN LED material", Proc. SPIE 3002, Light-Emitting Diodes: Research, Manufacturing, and Applications, (4 April 1997); doi: 10.1117/12.271037; https://doi.org/10.1117/12.271037
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