4 April 1997 Relevance of the GaN yellow luminescence for light-emitting diodes
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The competition between bandgap and the 2.2 eV yellow luminescence of epitaxial GaN is studied for excitation densities ranging from 5 X 10-6 W/cm-2 to 50 W/cm-2. The ratio of the peak intensities of the bandgap-to-yellow luminescence changes from 4 to 1 to 3000 to 1 as the excitation density is increased by seven orders of magnitude. At room temperature, the bandgap luminescence linewidth is 2.3kT, close to the theoretical minimum of 1.8kT. A model is developed describing the intensity of the two radiative transitions as a function of the excitation density. The theoretically predicted dependences of the two different luminescence channels follow power laws with exponents of 1/2, 1 and 3/2. The theoretical dependences are in excellent agreement with experimental results. It is shown that the intensity of the yellow luminescence line is negligibly small at typical injection currents of light- emitting diodes.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Grieshaber, W. Grieshaber, E. Fred Schubert, E. Fred Schubert, Robert F. Karlicek, Robert F. Karlicek, Matthew J. Schurman, Matthew J. Schurman, Chuong A. Tran, Chuong A. Tran, "Relevance of the GaN yellow luminescence for light-emitting diodes", Proc. SPIE 3002, Light-Emitting Diodes: Research, Manufacturing, and Applications, (4 April 1997); doi: 10.1117/12.271049; https://doi.org/10.1117/12.271049


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