4 April 1997 Relevance of the GaN yellow luminescence for light-emitting diodes
Author Affiliations +
Abstract
The competition between bandgap and the 2.2 eV yellow luminescence of epitaxial GaN is studied for excitation densities ranging from 5 X 10-6 W/cm-2 to 50 W/cm-2. The ratio of the peak intensities of the bandgap-to-yellow luminescence changes from 4 to 1 to 3000 to 1 as the excitation density is increased by seven orders of magnitude. At room temperature, the bandgap luminescence linewidth is 2.3kT, close to the theoretical minimum of 1.8kT. A model is developed describing the intensity of the two radiative transitions as a function of the excitation density. The theoretically predicted dependences of the two different luminescence channels follow power laws with exponents of 1/2, 1 and 3/2. The theoretical dependences are in excellent agreement with experimental results. It is shown that the intensity of the yellow luminescence line is negligibly small at typical injection currents of light- emitting diodes.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Grieshaber, W. Grieshaber, E. Fred Schubert, E. Fred Schubert, Robert F. Karlicek, Robert F. Karlicek, Matthew J. Schurman, Matthew J. Schurman, Chuong A. Tran, Chuong A. Tran, "Relevance of the GaN yellow luminescence for light-emitting diodes", Proc. SPIE 3002, Light-Emitting Diodes: Research, Manufacturing, and Applications, (4 April 1997); doi: 10.1117/12.271049; https://doi.org/10.1117/12.271049
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT

Yellow photoluminescence in MOCVD-grown n-type GaN
Proceedings of SPIE (April 06 1998)
Device challenges for biodetection
Proceedings of SPIE (October 12 2006)
Formation of deep acceptor centers in AlGaN alloys
Proceedings of SPIE (December 01 2008)
Potential of MBE for gallium nitride based lasers
Proceedings of SPIE (October 11 2005)

Back to Top