4 April 1997 High-performance vertical-cavity surface-emitting lasers for product applications
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Abstract
We report high performance 850 nm VCSELs grown by OMVPE on both n-type and p-type GaAs substrates for low cost fiber optic data communication applications. These devices are intended for use in discrete and parallel array applications at data rates up to 1.5 Gbps per channel. Good epitaxial thickness uniformity during multi-wafer growth allows low cost manufacturing and reproducible device performance. Preliminary device reliability testing shows excellent stability in VCSEL performance under accelerated stress conditions.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chun Lei, Chun Lei, Lee A. Hodge, Lee A. Hodge, Jim J. Dudley, Jim J. Dudley, Mark R. Keever, Mark R. Keever, Bing Liang, Bing Liang, Jay K. Bhagat, Jay K. Bhagat, Andrew Liao, Andrew Liao, } "High-performance vertical-cavity surface-emitting lasers for product applications", Proc. SPIE 3003, Vertical-Cavity Surface-Emitting Lasers, (4 April 1997); doi: 10.1117/12.271069; https://doi.org/10.1117/12.271069
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