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4 April 1997 Highly uniform and reproducible visible to near-infrared vertical-cavity surface-emitting lasers grown by MOVPE
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Abstract
We present the growth and characterization of vertical- cavity surface emitting lasers (VCSELs) from visible to near-infrared wavelength grown by metalorganic vapor phase epitaxy. Discussions on the growth issue of VCSEL materials include the control on growth rate and composition using an in situ normal-incidence reflectometer, optimization of ultra-high material uniformity, and comprehensive p- and n- type doping study in AlGaAs by CCl4 and Si2H6 over the entire Al composition range. We also demonstrate our recent achievements of selectively oxidized VCSELs which include the first room-temperature continues-wave demonstration of all-AlGaAs 700-nm red VCSELs, high- performance n-side up 850-nm VCSELs, and low threshold current and low-threshold voltage 1.06 micrometer VCSELs using InGaAs/GaAsP strain-compensated quantum wells.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hong Q. Hou, Kent D. Choquette, B. Eugene Hammons, William G. Breiland, Mary Hagerott Crawford, and Kevin L. Lear "Highly uniform and reproducible visible to near-infrared vertical-cavity surface-emitting lasers grown by MOVPE", Proc. SPIE 3003, Vertical-Cavity Surface-Emitting Lasers, (4 April 1997); https://doi.org/10.1117/12.271070
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