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4 April 1997 Microstructure and interface properties of laterally oxidized AlxGa1- xAs
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Abstract
The microstructure and interface properties of AlxGa1- xAs materials that have been laterally oxidized in wet N2 for several compositions (x equals 0.80, 0.82 . . . 1.00) and temperatures (360 degrees Celsius to 450 degrees Celsius) have been studied. The micro-structure is found to be relatively insensitive to composition and oxidation temperature. The oxidation forms an amorphous solid solution (AlxGa1-x)2O3 that transforms to polycrystalline, (gamma) -(AlxGa1-x)2O3 under electron beam exposure in the electron microscope. Evidence suggests a small fraction of crystalline (AlxGa1- x)2O3 is formed via post oxidation annealing of the oxide. The level of hydrogen present in the oxidized layers is 1.1 multiplied by 1021 cm-3, which is too low for the amorphous phase observed to be a hydroxide rather than an oxide. The amount of As in the layer is reduced to less than 2 atm%, and no As precipitates are observed. The (AlxGa1-x)2O3/GaAs interface is abrupt, but prolonged oxidation will cause the GaAs to oxidize at the internal interfaces. The reaction front between the oxidized and the unoxidized AlxGa1-xAs has a 10 to 20 nm-wide amorphous zone that shows a different contrast than the remainder of the amorphous oxide and is stable under electron irradiation.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ray D. Twesten, David M. Follstaedt, and Kent D. Choquette "Microstructure and interface properties of laterally oxidized AlxGa1- xAs", Proc. SPIE 3003, Vertical-Cavity Surface-Emitting Lasers, (4 April 1997); https://doi.org/10.1117/12.271072
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