Wafer-bonded AlGaInAs 1.3-um vertical-cavity surface-emitting lasers

Yi Qian; Zuhua Zhu; Yu-Hwa Lo; Hong Q. Hou; B. Eugene Hammons; Diana L. Huffaker; Dennis G. Deppe; Wei Lin; Mingcheng Wang; Y. K. Yu

doi:10.1117/12.271063

4 April 1997 Wafer-bonded AlGaInAs 1.3-um vertical-cavity surface-emitting lasers

Yi Qian, Zuhua Zhu, Yu-Hwa Lo, Hong Q. Hou, B. Eugene Hammons, Diana L. Huffaker, Dennis G. Deppe, Wei Lin, Mingcheng Wang, Y. K. Yu

Author Affiliations +

Proceedings Volume 3003, Vertical-Cavity Surface-Emitting Lasers; (1997) https://doi.org/10.1117/12.271063
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Wafer-bonded AlAs/GaAs mirrors and AlGaInAs strain- compensated multiple quantum well active layers have been applied into 1.3 micrometer vertical-cavity surface-emitting lasers (VCSELs). Double-bonded 1.3 micrometer VCSELs have operated at room temperature pulsed conditions with a high output power of 4.6 mW, a high characteristic temperature of 132 K, and a large side-mode suppression-ratio of 42 dB. A novel more practical approach for 1.3 micrometer VCSELs have been proposed and demonstrated a very low room temperature pulsed threshold current density of 1.13 kA/cm² and a very low threshold current of 2 mA. Further improvement focusing on practical approaches for long wavelength VCSELs is underway.

Citation Download Citation

Yi Qian, Zuhua Zhu, Yu-Hwa Lo, Hong Q. Hou, B. Eugene Hammons, Diana L. Huffaker, Dennis G. Deppe, Wei Lin, Mingcheng Wang, and Y. K. Yu "Wafer-bonded AlGaInAs 1.3-um vertical-cavity surface-emitting lasers", Proc. SPIE 3003, Vertical-Cavity Surface-Emitting Lasers, (4 April 1997); https://doi.org/10.1117/12.271063

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