4 April 1997 Wafer-bonded AlGaInAs 1.3-um vertical-cavity surface-emitting lasers
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Wafer-bonded AlAs/GaAs mirrors and AlGaInAs strain- compensated multiple quantum well active layers have been applied into 1.3 micrometer vertical-cavity surface-emitting lasers (VCSELs). Double-bonded 1.3 micrometer VCSELs have operated at room temperature pulsed conditions with a high output power of 4.6 mW, a high characteristic temperature of 132 K, and a large side-mode suppression-ratio of 42 dB. A novel more practical approach for 1.3 micrometer VCSELs have been proposed and demonstrated a very low room temperature pulsed threshold current density of 1.13 kA/cm2 and a very low threshold current of 2 mA. Further improvement focusing on practical approaches for long wavelength VCSELs is underway.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi Qian, Yi Qian, Zuhua Zhu, Zuhua Zhu, Yu-Hwa Lo, Yu-Hwa Lo, Hong Q. Hou, Hong Q. Hou, B. Eugene Hammons, B. Eugene Hammons, Diana L. Huffaker, Diana L. Huffaker, Dennis G. Deppe, Dennis G. Deppe, Wei Lin, Wei Lin, Mingcheng Wang, Mingcheng Wang, Y. K. Yu, Y. K. Yu, "Wafer-bonded AlGaInAs 1.3-um vertical-cavity surface-emitting lasers", Proc. SPIE 3003, Vertical-Cavity Surface-Emitting Lasers, (4 April 1997); doi: 10.1117/12.271063; https://doi.org/10.1117/12.271063

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