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1 May 1997 Characteristics of VCSELs and VCSEL arrays for optical data links
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High performance, low cost, and highly reliable vertical cavity surface emitting lasers (VCSELs) have been developed and are currently being used in both parallel and serial optical interconnect applications. For example, Motorola's OPTOBUSTM parallel optical interconnect relies heavily on the unique characteristics of arrays of GaAs based VCSELs emitting at 850 nm to achieve its stringent performance goals at low cost. Representative parametric results of discrete VCSELs and VCSEL arrays will be compared, including `optical power output-current' and `current-voltage' curves, optical wall plug efficiencies, and modulation characteristics. The use of statistical parameter analysis across a wafer and subsequent parametric wafer maps has proven to be a valuable tool for maintaining control of the fabrication process. The consistency of VCSEL parameters across individual VCSEL arrays will be discussed. VCSELs are very robust devices. Life times at room ambient in excess of 3E6 hours have been reported by several groups. Degradation behavior of selected device parameters will be discussed. Failure analysis demonstrating the effect of proton implant depth on reliability will be presented. ESD damage at forward bias is shown to be process related, while ESD damage at reverse bias is shown to be material related. These VCSELs are ESD Class 1 devices.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Craig A. Gaw, Wenbin Jiang, Michael S. Lebby, Philip A. Kiely, and Paul R. Claisse "Characteristics of VCSELs and VCSEL arrays for optical data links", Proc. SPIE 3004, Fabrication, Testing, and Reliability of Semiconductor Lasers II, (1 May 1997);


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