1 May 1997 Highly efficient 808-nm-range Al-free lasers by gas source MBE
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Aluminum-free material has proved to be very promising for lasers of 800 - 1000 nm wavelength range. Up to now the most widely used growth method of GaInAsP quaternary alloys was Metal-Organic Chemical Vapor Deposition (MOCVD) technique. Gas Source Molecular Beam Epitaxy (GSMBE) is also able to produce high-quality Al-free material for optoelectronics. This paper aims to present the direct comparison of laser material quality grown by MOCVD and GSMBE. The easiness of composition control, flexibility of the deposition process and composition uniformity in GSMBE-grown material allowed us to further improve the performance of laser diodes operating at 800 nm wavelength range.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander Ovtchinnikov, Alexander Ovtchinnikov, Jari T. Nappi, Jari T. Nappi, Jaan Aarik, Jaan Aarik, Stefan Mohrdiek, Stefan Mohrdiek, Harry M. Asonen, Harry M. Asonen, "Highly efficient 808-nm-range Al-free lasers by gas source MBE", Proc. SPIE 3004, Fabrication, Testing, and Reliability of Semiconductor Lasers II, (1 May 1997); doi: 10.1117/12.273828; https://doi.org/10.1117/12.273828


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