22 January 1997 High-speed resonant-cavity avalanche photodiodes with separate absorption and multiplication regions
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Abstract
The performance of conventional photodiodes is limited by an intrinsic tradeoff between quantum efficiency and bandwidth. We have successfully demonstrated that resonant-cavity photodiodes can simultaneously achieve high quantum efficiency and wide bandwidth. The resonant-cavity approach lengthens the effective absorption thickness through multiple reflections between two parallel mirrors. Previously, it has been shown that resonant-cavity, separate-absorption-and-multiplication (SAM) avalanche photodiodes (APDs) exhibit high peak external quantum efficiency (approximately 75%), low dark current and low bias voltage (less than 15 volts). In this paper, we describe the frequency response of resonant-cavity AlGaAs/GaAs/InGaAs SAM APDs. A unity-gain bandwidth of 23 GHz and a high gain-bandwidth product of 130 GHz have been achieved. Also, low multiplication noise characteristics (0.2 less than k less than 0.3) are reported.
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Hui Nie, K. Alex Anselm, C. Hu, Ben G. Streetman, Joe C. Campbell, "High-speed resonant-cavity avalanche photodiodes with separate absorption and multiplication regions", Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); doi: 10.1117/12.264252; https://doi.org/10.1117/12.264252
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