22 January 1997 High-speed resonant-cavity avalanche photodiodes with separate absorption and multiplication regions
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Proceedings Volume 3006, Optoelectronic Integrated Circuits; (1997); doi: 10.1117/12.264252
Event: Photonics West '97, 1997, San Jose, CA, United States
Abstract
The performance of conventional photodiodes is limited by an intrinsic tradeoff between quantum efficiency and bandwidth. We have successfully demonstrated that resonant-cavity photodiodes can simultaneously achieve high quantum efficiency and wide bandwidth. The resonant-cavity approach lengthens the effective absorption thickness through multiple reflections between two parallel mirrors. Previously, it has been shown that resonant-cavity, separate-absorption-and-multiplication (SAM) avalanche photodiodes (APDs) exhibit high peak external quantum efficiency (approximately 75%), low dark current and low bias voltage (less than 15 volts). In this paper, we describe the frequency response of resonant-cavity AlGaAs/GaAs/InGaAs SAM APDs. A unity-gain bandwidth of 23 GHz and a high gain-bandwidth product of 130 GHz have been achieved. Also, low multiplication noise characteristics (0.2 less than k less than 0.3) are reported.
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Hui Nie, K. Alex Anselm, C. Hu, Ben G. Streetman, Joe C. Campbell, "High-speed resonant-cavity avalanche photodiodes with separate absorption and multiplication regions", Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); doi: 10.1117/12.264252; https://doi.org/10.1117/12.264252
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KEYWORDS
Avalanche photodetectors

Absorption

Avalanche photodiodes

Mirrors

Photodiodes

Gallium arsenide

Quantum efficiency

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