Laser devices by selective-area epitaxy

Robert M. Lammert; James J. Coleman

doi:10.1117/12.264213

22 January 1997 Laser devices by selective-area epitaxy

Robert M. Lammert, James J. Coleman

Proceedings Volume 3006, Optoelectronic Integrated Circuits; (1997) https://doi.org/10.1117/12.264213
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

The design and operation of strained-laser InGaAs-GaAs laser sources fabricated by selective-area epitaxy (SAE) are presented. These devices include lasers with low threshold currents, lasers with nonabsorbing mirrors, and dual channel sources. The low threshold lasers have threshold currents as low as 2.65 mA for an uncoated device and 0.97 mA for a coated device. The lasers with nonabsorbing mirrors exhibited optical powers up to approximately 325 mW/facet (4 micrometer wide output aperture), which is a greater than 40% increase over conventional SAE lasers. The dual channel source is capable of coupling two discrete optical sources into a single mode fiber without the need for an external coupler.

Citation Download Citation

Robert M. Lammert and James J. Coleman "Laser devices by selective-area epitaxy", Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); https://doi.org/10.1117/12.264213

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