22 January 1997 Materials reliability for high-speed lithium niobate modulators
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Abstract
As demand for lithium niobate optical modulators for use in high-speed optical communication systems has increased, their device performance and reliability have been vigorously improved, and some devices have found practical applications in systems. However, there are few reports, yet, about the quality and reliability of the lithium niobate material itself, although such information is necessary for improving further the device reliability and the fabrication yield. Here is presented data concerning material reliability for z-cut lithium niobate wafers commercially supplied in Japan. A variation is detected sometimes in the device performance such as dc-drift and optical insertion loss, and it seems to be caused mainly by an unpredictable fluctuation in the performance of individual wafers.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hirotoshi Nagata, Naoki Mitsugi, Junichiro Ichikawa, and Junichiro Minowa "Materials reliability for high-speed lithium niobate modulators", Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); doi: 10.1117/12.264231; https://doi.org/10.1117/12.264231
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