22 January 1997 Novel high-frequency electroabsorption multiple-quantum-well waveguide modulator operating at 1.3 μm on GaAs substrates
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Abstract
A novel InGaAs/InAlAs multiple-quantum-well electroabsorption waveguide modulator operating at 1.3 micrometer wavelength has been designed and fabricated for the first time on a GaAs substrate The high-frequency performance of the modulator in an amplifierless rf fiber- optic link is described.
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Kwok Kwong Loi, Kwok Kwong Loi, Lei Shen, Lei Shen, Harry H. Wieder, Harry H. Wieder, William S. C. Chang, William S. C. Chang, "Novel high-frequency electroabsorption multiple-quantum-well waveguide modulator operating at 1.3 μm on GaAs substrates", Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); doi: 10.1117/12.264250; https://doi.org/10.1117/12.264250
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