22 January 1997 Progress in normal-incidence III-V quantum well infrared photodetectors
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Abstract
Intersubband transitions in GaAs/(Al,Ga)As quantum wells have been successfully used in the design of novel infrared detectors for over a decade now. Both conduction- and valence-band based detectors have been investigated. In general, the conduction-band based detectors fabricated from direct gap GaAs/(Al,Ga)As heterostructures are not sensitive to normal-incidence light. This is a consequence of the quantum mechanical rules that govern light absorption in these structures. In order to detect normal-incidence light, a grating structure which scatters the incident light into higher order, transverse magnetic modes is used. To avoid the use of gratings, research is being carried out in (In,Ga,Al)As/(Al,Ga)As conduction-band quantum well structures that can absorb normal-incidence light. This paper reviews recent progress in such detectors.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Elias Towe, R. H. Henderson, Stephen W. Kennerly, "Progress in normal-incidence III-V quantum well infrared photodetectors", Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); doi: 10.1117/12.264206; https://doi.org/10.1117/12.264206
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