Translator Disclaimer
22 January 1997 Progress in normal-incidence III-V quantum well infrared photodetectors
Author Affiliations +
Intersubband transitions in GaAs/(Al,Ga)As quantum wells have been successfully used in the design of novel infrared detectors for over a decade now. Both conduction- and valence-band based detectors have been investigated. In general, the conduction-band based detectors fabricated from direct gap GaAs/(Al,Ga)As heterostructures are not sensitive to normal-incidence light. This is a consequence of the quantum mechanical rules that govern light absorption in these structures. In order to detect normal-incidence light, a grating structure which scatters the incident light into higher order, transverse magnetic modes is used. To avoid the use of gratings, research is being carried out in (In,Ga,Al)As/(Al,Ga)As conduction-band quantum well structures that can absorb normal-incidence light. This paper reviews recent progress in such detectors.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Elias Towe, R. H. Henderson, and Stephen W. Kennerly "Progress in normal-incidence III-V quantum well infrared photodetectors", Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997);


Terahertz quantum well photodetectors
Proceedings of SPIE (August 28 2006)
GaAs quantum well infrared detectors grown on 3 inch GaAs...
Proceedings of SPIE (December 09 1992)
Phonon and polaron enhanced IR-THz photodetectors
Proceedings of SPIE (January 24 2011)
Terahertz quantum well photodetectors
Proceedings of SPIE (November 17 2005)
Infrared applications of quantum well structures
Proceedings of SPIE (November 28 2000)

Back to Top