22 January 1997 Theoretical and experimental studies on large-bandwidth 1.55-μm integrated InP-based strained MQW laser-modulators
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Abstract
The performance characteristics of an integrated InGaAsP/InP laser-modulator made by one step epitaxy and well-controlled reactive ion etching (RIE) have been analyzed and measured. A theoretical model based on a finite-difference time domain (FDTD) technique was used to simulate the propagation of a optical wave launched in the coupled system and determine the reflectivity of the facets created by RIE. The calculated effective reflectivity of the coupling region consisting of two facets and an air gap in between is 0.55, which is in a good agreement with the experimentally measured value of 0.5. The reflectivity of a single etched mirror derived from this value is estimated to be 0.3. A 120 micrometer long integrated modulator excited by the laser shows a maximum extinction ratio of 8 dB and a modulation bandwidth greater than or equal to 14 GHz at a dc bias of minus 0.5 V with a bias swing of 2 V. This is comparable to the best results reported for an integrated modulator.
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Ram Jambunathan, Ram Jambunathan, Yahsing Yuan, Yahsing Yuan, Jasprit Singh, Jasprit Singh, Pallab Bhattacharya, Pallab Bhattacharya, "Theoretical and experimental studies on large-bandwidth 1.55-μm integrated InP-based strained MQW laser-modulators", Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); doi: 10.1117/12.264221; https://doi.org/10.1117/12.264221
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