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22 January 1997 Wavelength division multiplexed (WDM) electroabsorption modulated laser fabricated by selective area growth MOVPE techniques
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Abstract
This paper describes the fabrication techniques pertaining to the on-wafer lasing wavelength control of an electroabsorption modulated laser (EML) using both a direct approach and a tunable wavelength source. The direct approach utilizes multiple grating pitches to control the on-wafer lasing wavelength of the DFB arrays. High resolution E-beam lithography was used to generate a phase mask to produce seven grating pitches separated by 0.25 nm pitch intervals. In a tunable wavelength sources approach, we used a multi-electrodes DFB lasers integrated with a bent waveguide for the wavelength tuning. These fabrication techniques show a promising low cost way of mass producing either set of discrete DFB devices with different wavelengths or a more complicated integrated device with wavelength combiner and a modulator.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tawee Tanbun-Ek, Wei-Chiao W. Fang, Clyde G. Bethea, Paul F. Sciortino Jr., A. Michael Sergent, Patrick W. Wisk, Roosevelt People, Sung-Nee G. Chu, R. Pawelek, Won-Tien Tsang, Donald M. Tennant, Ken S. Feder, and Uziel Koren "Wavelength division multiplexed (WDM) electroabsorption modulated laser fabricated by selective area growth MOVPE techniques", Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); https://doi.org/10.1117/12.264218
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