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25 April 1997 Epitaxial SiGeC photodiode grown on Si substrate with response in the 1.3- to 1.55-μm wavelength range
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Abstract
We present results on epitaxial SiGeC alloy layers grown on Si substrates for optical receiver applications in the 1.3 - 1.55 micrometers wavelength range. The active absorbing layer of the pin photodiodes consist of a strained SiGeC alloy. The SiGeC alloy has a Ge content of 55% and 40%, with a thickness of 80 nm and 200 nm, respectively. TEM images review a high quality epitaxial film with a sharp interface between the SiGeC layer and the Si substrate. The devices show a breakdown voltage of about 6 V. Both surface normal and waveguide structures have been fabricated, and optical response extending to 1.55 micrometers has been demonstrated. At normal incidence the external quantum efficiency of the device with a 55%-Ge content is close to 1% at 1.3 micrometers . For a waveguide structure of 400-micrometers length the external quantum efficiency is 8% at 1.3 micrometers , and limited by the fiber coupling coefficient.
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Fred F.Y. Huang, Michael Chu, Kang Lung Wang, Paul D. Trinh, and Bahram Jalali "Epitaxial SiGeC photodiode grown on Si substrate with response in the 1.3- to 1.55-μm wavelength range", Proc. SPIE 3007, Silicon-Based Monolithic and Hybrid Optoelectronic Devices, (25 April 1997); https://doi.org/10.1117/12.273858
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