Ge1-xCx/Si heterojunction photodiode

Xiaoping Shao; Sean L. Rommel; Bradley A. Orner; H. Feng; Michael W. Dashiell; James Kolodzey; Paul Raymond Berger

doi:10.1117/12.273850

25 April 1997 Ge_1-xC_x/Si heterojunction photodiode

Xiaoping Shao, Sean L. Rommel, Bradley A. Orner, H. Feng, Michael W. Dashiell, James Kolodzey, Paul Raymond Berger

Proceedings Volume 3007, Silicon-Based Monolithic and Hybrid Optoelectronic Devices; (1997) https://doi.org/10.1117/12.273850
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

We report on the fabrication and characterization of a photodiode made from a heterojunction of epitaxial p-type Ge_1-xC_x on an n-type Si substrate. Epitaxial Ge_1-xC_x layers with carbon percentages of 0.2, 0.8, 1.4 and 2% were grown on (100) Si substrates by solid source molecular beam epitaxy. The p-GeC/n-Si junction exhibits diode rectification with low reverse saturation current (2 at -1 volt) and high reverse breakdown voltage in excess of -40 volts. Despite the large number of dislocations and defects at the heterojunction, photoresponsivity was observed from the p- Ge_1-xC_x/n-Si diodes using laser excitation at a wavelength of 1.3 micrometers . External quantum efficiency was measured between 1.2 and 2.3%.

Citation Download Citation

Xiaoping Shao, Sean L. Rommel, Bradley A. Orner, H. Feng, Michael W. Dashiell, James Kolodzey, and Paul Raymond Berger "Ge_1-xC_x/Si heterojunction photodiode", Proc. SPIE 3007, Silicon-Based Monolithic and Hybrid Optoelectronic Devices, (25 April 1997); https://doi.org/10.1117/12.273850

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