Lattice modification and luminescence of dry-etched Si-Si1-xGex quantum dots

Yin-Sheng Tang; Simon E. Hicks; Chris D. W. Wilkinson; C.M. Sotomayor Torres; W. X. Ni; Jens Birch; J. B. Joelsson; Goeran V. Hansson; A. Kvick; K. L. Wang

doi:10.1117/12.273851

25 April 1997 Lattice modification and luminescence of dry-etched Si-Si1-xGex quantum dots

Yin-Sheng Tang, Simon E. Hicks, Chris D. W. Wilkinson, C.M. Sotomayor Torres, W. X. Ni, Jens Birch, J. B. Joelsson, Goeran V. Hansson, A. Kvick, K. L. Wang

Author Affiliations +

Proceedings Volume 3007, Silicon-Based Monolithic and Hybrid Optoelectronic Devices; (1997) https://doi.org/10.1117/12.273851
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Arrays of 40 - 50 nm quantum dots were fabricated from Si- Si_1-xGe_x single quantum well and superlattice structures grown by molecular beam epitaxy. The dots showing strong luminescence were studied by synchrotron source x-ray diffraction. Some of the dots were coated with SiN_x films containing different build-in stresses. It was found that the luminescence intensity depends strongly on the amount of stress in the SiN_x coating, being strongest when the stress was close to zero. A strain symmetrization process occurred in the bright dots. Although an exact physical origin is not yet available, it is exciting that these quantum dot diodes work at room temperature and that the whole fabrication procedure is compatible with Si- technology.

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Yin-Sheng Tang, Simon E. Hicks, Chris D. W. Wilkinson, C.M. Sotomayor Torres, W. X. Ni, Jens Birch, J. B. Joelsson, Goeran V. Hansson, A. Kvick, and K. L. Wang "Lattice modification and luminescence of dry-etched Si-Si1-xGex quantum dots", Proc. SPIE 3007, Silicon-Based Monolithic and Hybrid Optoelectronic Devices, (25 April 1997); https://doi.org/10.1117/12.273851

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