11 April 1997 Ferroelectric PZT thin films on Si and SBN substrates
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Abstract
The sol-gel technique has been used to produce perovskite PZT thin films on lattice-matched SBN:60 and LaAlO3 substrates. These films were spin-coated and then annealed in the range of 500-700 degrees C in an oxygen atmosphere. Highly grain oriented films showed high polarization and the potential for a large electro-optic response.In all cases, the PZT thin films were highly crystalline, with dielectric constants > 1300. PZT films were also deposited on Pt- metallized Si using the same deposition technique in order to establish the effect of annealing conditions on the formation of pyrochlore phase.
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Ratnakar R. Neurgaonkar, Ratnakar R. Neurgaonkar, Jeffrey G. Nelson, Jeffrey G. Nelson, Joey Lin, Joey Lin, James Cheng, James Cheng, } "Ferroelectric PZT thin films on Si and SBN substrates", Proc. SPIE 3008, Miniaturized Systems with Micro-Optics and Micromechanics II, (11 April 1997); doi: 10.1117/12.271434; https://doi.org/10.1117/12.271434
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