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11 April 1997 Ferroelectric PZT thin films on Si and SBN substrates
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The sol-gel technique has been used to produce perovskite PZT thin films on lattice-matched SBN:60 and LaAlO3 substrates. These films were spin-coated and then annealed in the range of 500-700 degrees C in an oxygen atmosphere. Highly grain oriented films showed high polarization and the potential for a large electro-optic response.In all cases, the PZT thin films were highly crystalline, with dielectric constants > 1300. PZT films were also deposited on Pt- metallized Si using the same deposition technique in order to establish the effect of annealing conditions on the formation of pyrochlore phase.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ratnakar R. Neurgaonkar, Jeffrey G. Nelson, Joey Lin, and James Cheng "Ferroelectric PZT thin films on Si and SBN substrates", Proc. SPIE 3008, Miniaturized Systems with Micro-Optics and Micromechanics II, (11 April 1997);

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