Paper
11 April 1997 InP-based micromechanical tunable and selective photodetector for WDM systems
Christian Seassal, Jean Louis Leclercq, Xavier Letartre, A. Gagnaire, Michel Gendry, Pierre Viktorovitch, J. P. Laine, F. Sidoroff, Ronan Le Dantec, C. Miu, Taha Benyattou, Gerard Guillot, D. Rondi, Robert R. Blondeau
Author Affiliations +
Abstract
The design and the fabrication of vertical InP-based micro- opto-electro-mechanical devices are reported. These are based on micromachined III-V semiconductor structures realized by selective removal of adapted sacrificial layers in order to produce Fabry-Perot resonant microcavity. Continuous wavelength running of 50nm around 1.55 micrometers for a 15 volt bias actuation has been demonstrated. Resonant peak full width at half maximum of about 10 nm at 1.5 micrometers has been performed on a InP/air gap multilayered interferometric filter. The integration of absorbing layers inside the cavity will allow us to realize resonant cavity enhanced photonic devices with thinner, and therefore faster, photodetector structures with high quantum efficiencies.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christian Seassal, Jean Louis Leclercq, Xavier Letartre, A. Gagnaire, Michel Gendry, Pierre Viktorovitch, J. P. Laine, F. Sidoroff, Ronan Le Dantec, C. Miu, Taha Benyattou, Gerard Guillot, D. Rondi, and Robert R. Blondeau "InP-based micromechanical tunable and selective photodetector for WDM systems", Proc. SPIE 3008, Miniaturized Systems with Micro-Optics and Micromechanics II, (11 April 1997); https://doi.org/10.1117/12.271441
Lens.org Logo
CITATIONS
Cited by 6 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Reflectors

Photodetectors

Semiconductors

Tunable filters

Wavelength division multiplexing

Mirrors

Etching

Back to Top