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10 April 1997 Gated four-probe TFT structure: a new technique to measure the intrinsic performance of a-Si:H TFT
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Abstract
A new technique to determine the intrinsic performance of hydrogenated amorphous silicon thin film transistor (TFT) without any influence from source/drain series resistances is proposed. This technique is based on a-Si:H gated-four- probe (GFP) TFT structure. In this method, two probes within the channel of a conventional inverted-staggered a-Si:H TFT are used to measured the voltage difference. By correlating this voltage difference with the drain-source current induced by applied gate bias, the intrinsic performance of a-Si:H TFT, such as mobility, threshold voltage and field- effect conductance activation energy, can be accurately determined without influence from the source/drain series resistances. The a-Si:H GFP TFT and conventional a-Si:H TFT structures are also analyzed and their properties are compared by using 2D simulation based on finite element method. The influence of series resistances on a-Si:H TFT electrical performance is clearly described from the simulation results.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chun-Ying Chen and Jerzy Kanicki "Gated four-probe TFT structure: a new technique to measure the intrinsic performance of a-Si:H TFT", Proc. SPIE 3014, Active Matrix Liquid Crystal Displays Technology and Applications, (10 April 1997); https://doi.org/10.1117/12.270279
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